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Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N165 / 3N166
FEATURES
CORPORATION
* Very High Impedance * High Gate Breakdown * Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . . 125 Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW Total Derating above 25oC. . . . . . . . . . . . . . . . . . 4.2mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
BOTTOM VIEW
TO-99
D2 G2
S
D1 G1
C
0180
2506
C
G2 G1
D2 D1 S
ORDERING INFORMATION DEVICE SCHEMATIC
1 7
Part 3N165-66 X3N165-66
5
Package Hermetic TO-99 Sorted Chips in Carriers
Temperature Range -55oC to +150oC -55oC to +150oC
3
8
4
0190
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL IGSSR IGSSF IDSS ISDS ID(on) VGS(th) VGS(th) rDS(on) PARAMETER Gate Reverse Leakage Current Gate Forward Leakage Current Drain to Source Leakage Current Source to Drain Leakage Current On Drain Current Gate Source Threshold Voltage Gate Source Threshold Voltage Drain Source ON Resistance -5 -2 -2 MIN MAX 10 -10 -25 -200 -400 -30 -5 -5 300 ohms mA V pA VDS = -20V VSD = -20V, VDB = 0 VDS = -15V, VGS = -10V VDS = -15V, ID = -10A VDS = VGS, I D = -10A VGS = -20V, ID = -100A UNITS VGS = 40V VGS = -40V TA = +125oC TEST CONDITIONS
3N165 / 3N166
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL gfs gos Ciss Crss Coss RE(Yfs) PARAMETER Forward Transconductance Output Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Common Source Forward Transconductance 1200 MIN 1500 MAX 3000 300 3.0 0.7 3.0 s VDS = -15V, ID = -10mA, f = 100MHz (Note 4) pF VDS = -15V, ID = -10mA, f = 1MHz (Note 4) UNITS S TEST CONDITIONS VDS = -15V, ID = -10mA, f = 1kHz
MATCHING CHARACTERISTICS
SYMBOL Yfs1 / Yfs2 VGS1-2 VGS1-2 T NOTES: 1. 2. 3. 4.
3N165
MIN 0.90 MAX 1.0 100 100 mV V/ oC UNITS TEST CONDITIONS VDS = -15V, ID = -500A, f = 1kHz VDS = -15V, ID = -500A VDS = -15V, IA = -500A TA = -55oC to +25 oC
PARAMETER Forward Transconductance Ratio Gate Source Threshold Voltage Differential Gate Source Threshold Voltage Differential Change with Temperature
See handling precautions on 3N170 data sheet. Per transistor. Devices must not be tested at 125V more than once, nor longer than 300ms. For design reference only, not 100% tested.
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